R. A. Muminov, S. A. Radzhapov, B. S. Radzhapov, R. Kh. Rakhimov, “The ionizing radiation detectors based on neutron-doped silicon”, Comp. nanotechnol., 2016, Issue 4,Pages <nobr>136

PLASMA, HIGH-FREQUENCY, MICROWAVE AND LASER TECHNOLOGY

The ionizing radiation detectors based on neutron-doped silicon

R. A. Muminov^a, S. A. Radzhapov^a, B. S. Radzhapov^a, R. Kh. Rakhimov^b

^a Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
^b Institute of materials science, «Physics-sun». Uzbekistan Academy of sciences

Abstract: The article considers features of development of detectors of ionizi-roumega radiation with the working area $S\geq30$ mm$^2$ and a thickness of $W>0.2$ mm, based on single crystals of compensated neutron doping of silicon. Peculiarities of electrophysical and spectral characteristics.

Keywords: monocrystalline silicon, neutron-doped silicon, «input» and «output» window of the detector degradation, energy times-the decision.