PHYSICS

The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals

V. M. Gusev, N. P. Busharov, K. D. Demakov, Yu. G. Kozlov

I. V. Kurchatov Institute of Atomic Energy

UDC: 539.2

Presented: L. A. Artsimovich
Received: 20.07.1970