RUS
ENG
Full version
JOURNALS
// Doklady Akademii Nauk
// Archive
Dokl. Akad. Nauk SSSR,
1988
Volume 299,
Number 2,
Pages
358–362
(Mi dan48228)
PHYSICS
The ionization-enhanced defect production in dioped silicon
P. Kh. Khabibullaev
,
S. N. Abdurakhmanova
,
M. A. Zaikovskaya
,
Kh. Kh. Mannanova
,
B. L. Oksengendler
,
M. S. Yunusov
Institute for Nuclear Physics of Uzbekistan Academy of Sciences, Tashkent
UDC:
537.5:621.315.592
Received: 03.09.1987
Fulltext:
PDF file (362 kB)
©
Steklov Math. Inst. of RAS
, 2024