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JOURNALS // Doklady Akademii Nauk // Archive

Dokl. Akad. Nauk SSSR, 1988 Volume 299, Number 2, Pages 358–362 (Mi dan48228)

PHYSICS

The ionization-enhanced defect production in dioped silicon

P. Kh. Khabibullaev, S. N. Abdurakhmanova, M. A. Zaikovskaya, Kh. Kh. Mannanova, B. L. Oksengendler, M. S. Yunusov

Institute for Nuclear Physics of Uzbekistan Academy of Sciences, Tashkent

UDC: 537.5:621.315.592

Received: 03.09.1987



© Steklov Math. Inst. of RAS, 2024