O. V. Koplak, M. A. Vasil’ev, R. B. Morgunov, “Distribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes under plastic deformation in subsurface layers of Si: B crystals”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 2,Pages 242

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Semiconductors

Distribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes under plastic deformation in subsurface layers of Si: B crystals

O. V. Koplak^ab, M. A. Vasil’ev^c, R. B. Morgunov^a

^a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b National Taras Shevchenko University of Kyiv
^c G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

Abstract: The redistribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes in subsurface layers of Si: B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of $^{28}$Si and $^{29}$Si isotopes becomes smoother after deformation, whereas the $^{30}$Si isotope distribution remains unchanged. A change in the subsurface profile of the $^{29}$SiO oxide is observed, which indicates the migration of the $^{29}$Si isotope in the composition of oxygen complexes during plastic deformation.

Received: 02.07.2015