Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes

Spin light-emitting diodes based on InGaAs/GaAs heterostructures and CoPt$_x$ ferromagnetic contacts, where the composition varied within (1 $\le x\le$ 2.5), were formed and studied. It is shown that varying the composition of the ferromagnetic contact provides control over the type of magnetic field dependence of the circular polarization degree of electroluminescence. Research has shown that control is carried out by modulating the magnetic characteristics of the films when varying the composition. The obtained result shows the possibility of controlling the magnetization of the contacts of a spin light-emitting diode using a magnetic field, which is useful from a practical point of view.