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Fizika Tverdogo Tela, 2024 Volume 66, Issue 2, Pages 266–274 (Mi ftt10239)

Surface physics, thin films

Electrical properties of tandem solar cells based on films of organic-inorganic perovskites deposited on thin-film silicon solar cells

G. V. Nenasheva, N. A. Fokinaab, M. S. Dunaevskiia, A. N. Aleshina

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia

Abstract: This study presents an analysis of the morphological and electrical properties of multilayer structures fabricated using thin films of organometallic halide perovskites (OHP), specifically CH$_3$NH$_3$PbI$_3$, deposited onto the surface of crystalline silicon ($c$-Si)-based solar cells. The structural morphology and electrical characteristics of these multilayered configurations were investigated through atomic force microscopy (AFM), current-voltage (I–V) characterization, and impedance spectroscopy. The AFM observations revealed significant morphological variations among the produced samples. I–V analysis conducted at 300 K indicated that all samples exhibited enhanced photoconductivity relative to pure $c$-Si, suggesting a beneficial influence of the perovskite layer. Impedance spectroscopy analysis revealed that in the absence of light, a sample with a perovskite layer on $c$-Si displayed two semicircles in its Nyquist plot, implying the coexistence of two distinct processes, such as ion diffusion or charge recombination. These processes appear to converge into a single mechanism upon exposure to light, a change attributed to the altered concentration of charge carriers. The findings of this research pave the way for further optimization and enhancement of the performance parameters of advanced tandem $c$-Si solar cells with top layers composed of organometallic halide perovskites.

Keywords: impedance spectroscopy, electrical conductivity, solar cells, organic-inorganic perovskites, crystalline silicon.

Received: 14.12.2023
Revised: 14.12.2023
Accepted: 25.12.2023

DOI: 10.61011/FTT.2024.02.57250.271



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© Steklov Math. Inst. of RAS, 2025