Hall effect and quantum oscillations of magnetoresistivity in the topological insulator Bi$_2$Se$_3$. The role of bulk and surface carriers

At temperatures of 5 and 10 K and in magnetic fields up to 9 T, the field dependences of the magnetoresistivity and Hall resistivity of a topological insulator Bi$_2$Se$_3$ single crystal were measured. It was shown, that the Hall effect is due to bulk carriers, while the Shubnikov-de Haas oscillations are associated with two-dimensional carriers.