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Fizika Tverdogo Tela, 2024 Volume 66, Issue 7, Pages 1093–1100 (Mi ftt10362)

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11-15, 2024
Magnetism, spintronics

Temperature dependence of the spin current in iridate/manganite heterostructures

G. D. Ul'evab, K. I. Constantiniana, G. A. Ovsyannikova, I. E. Moscala, A. V. Shadrinac

a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russia
b National Research University Higher School of Economics, Moscow, Russia
c Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region

Abstract: The results of an experimental study of the temperature dependences of spin-dependent resistive characteristics of the iridate/manganite heterostructure (SrIrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$), taken in the configuration of the planar Hall effect, as well as the amplitude of the spin current arising under the action of microwave exposure in ferromagnetic resonance conditions, are presented. The spin Hall angle was determined from the angular dependences of the transverse and longitudinal spin magnetoresistance of the heterostructure. The effect of shunting by anisotropic magnetoresistance of a magnetic film in a heterostructure is discussed. For comparison, the data obtained on the manganite film are presented.

Keywords: spin current, spin-orbital interaction, thin films, heterostructure, magnetoresistance, strontium iridate, manganite.

Received: 18.04.2024
Revised: 18.04.2024
Accepted: 08.05.2024

DOI: 10.61011/FTT.2024.07.58379.49HH



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