Growth of epitaxial thin films of Sr$_2$IrO$_4$ antiferromagnet for spintronics heterostructures

A comparison of the parameters of epitaxial thin films of strontium iridate Sr$_2$IrO$_4$ obtained by two methods: cathode sputtering on direct current and cathode sputtering on pulsed current is presented. The resistive and crystallographic characteristics of the obtained thin-film samples are compared. The models of electronic transport of the obtained films are discussed: thermal activation, typical for a band dielectric, and three-dimensional hopping conductivity, characteristic of a Mott hopping conductor.