Temperature dependence of the Hall coefficient and the specific electrical conductivity of a single crystal Bi$_{0.6}$Sb$_{1.4}$Te$_3$

The results of a study of the temperature dependences of the Hall coefficient and the specific electrical conductivity of a single crystal Bi$_{0.6}$Sb$_{1.4}$Te$_3$ obtained in the temperature range from 80 to 600 K. It is established that there are features in the change in the value of the specific electrical conductivity in the temperature range in which the maximum rate of decrease in diamagnetic susceptibility and deformation of the plasma edge due to convergence of energies are fixed for this crystal plasmon and electronic transition between nonequivalent extremes of the valence band.