Revisiting the fine structure of 2$p$ spectra from the (100) silicon surface

Using the synchrotron radiation and high-resolution photoelectron spectroscopy (56–66 meV), the fine structure of the 2$p$ spectra from the Si(100) surface at 100 K has been studied in a wide range of electron escape depths. It is shown that these spectra include five surface components. The relationship between their core-level shifts and the atomic and electronic structure of the c(4 $\times$ 2) reconstruction is established. The experimental conditions where the 2$p$ spectra have the greatest sensitivity to the surface and bulk of silicon are determined and, in particular, the inelastic mean free path for electrons in a silicon crystal is obtained as a function of photon energy. The results obtained can be used as reference data in studies of various surface structures on the Si(100) substrate using photoemission techniques.