Ferromagnetism in GaAs structures delta-doped with Fe

The work examines the formation of GaAs structures with a Fe delta-doping layer using the method of pulsed laser deposition in vacuum. The structures with the Fe delta-doping layer deposited within 25 and 35 s can be characterized as the intrinsic ferromagnetic semiconductor with the Curie temperature of 70–80 K. In structures with the Fe delta-doping layer deposited within 45 s, the formation of some second ferromagnetic intermetallic phase with the Curie temperature of 100–120 K is observed.