Structure and kinetics of disproportionation of GeO thin films

The study object is thin films ($\sim$10–15 nm) of germanium monoxide obtained by thermal evaporation in vacuum of composite GeO$_2$ layers containing Ge nanoclusters and deposition of GeO vapor on a cold substrate. Based on X-ray photoelectron spectroscopy data, it has been established that the short-range order structure of germanium monoxide films can be described by the random bonding model. The stoichiometric parameter $x$ in GeO$_x$ films was 1.07 $\pm$ 0.05. Raman spectroscopy and infrared spectroscopy data indicate different depths of the GeO disproportionation process during annealing from 5 to 30 minutes and a temperature of 200–400$^\circ$C in vacuum. Annealing for 45 minutes or more at the same temperatures led to partial oxidation of amorphous Ge clusters in the oxide matrix.