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Fizika Tverdogo Tela, 2024 Volume 66, Issue 10, Pages 1680–1685 (Mi ftt10446)

Semiconductors

Multilayer selective sensor structures based on nonstoichiometric oxides of manganese and tin

V. V. Bolotov, E. V. Knyazev, S. N. Nesov, K. E. Ivlev, I. V. Ponomareva, Yu. A. Sten'kin, E. A. Roslikova, D. V. Sokolov

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, Omsk, Russia

Abstract: The morphology, chemical composition of nonstoichiometric manganese oxide obtained by various methods for its use as a sorbing layer are investigated. The changes in the chemical state of manganese after interaction with hydrogen sulfide vapors have been studied. The differences in the sorption mechanism for layers obtained by different technological modes are shown. The possibility of creating a test sensor structure with a sorbing layer based on manganese and tin oxides is demonstrated.

Keywords: gas sorbents, gas sensors, manganese oxide, tin oxide.

Received: 16.07.2024
Revised: 10.08.2024
Accepted: 11.08.2024

DOI: 10.61011/FTT.2024.10.59072.203



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© Steklov Math. Inst. of RAS, 2025