Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing

The preparation of the ferromagnetic semiconductor GaMnAs by ion implantation and three types of annealing is considered: rapid thermal, pulsed laser, and combined annealing (a combination of rapid thermal and pulsed laser annealing). Rapid thermal annealing contributed to the improvement of crystallinity and the formation of clusters (including ferromagnetic ones at room temperature), and subsequent exposure to laser radiation led to their modification. When studying the structural, galvanomagnetic and magneto-optical properties, the formation of two ferromagnetic phases, differing in Curie temperature, was revealed in GaMnAs layers.