Abstract:
The possibility of reproducible creation of optically active centers in hexagonal boron nitride (hBN) in the visible and near infrared ranges by irradiating hBN with high-energy protons (15 MeV) was investigated. It was shown that such irradiation leads to the appearance of a set of narrow zero-phonon lines (ZPL) with wavelengths $\lambda_{\mathrm{ZPL1}}$ = 533.3 nm, $\lambda_{\mathrm{ZPL2}}$ = 542.6 nm, $\lambda_{\mathrm{ZPL3}}$ = 542.6 nm in the visible range of the micro-photoluminescence spectrum upon excitation by a laser with $\lambda$ = 514 nm and a temperature $T$ = 12 K. In this case, the zero-phonon line $\lambda_{\mathrm{ZPL1}}$ is also observed at room temperature with a maximum intensity at a wavelength of $\lambda_{\mathrm{ZPL1}}$ = 534.9 nm. Along with these lines, the photoluminescence spectrum contains a band in the near IR range, corresponding to a negatively charged boron vacancy $(V_{\mathrm{B}}^-)$.
Keywords:hexagonal boron nitride, color centers, micro-photoluminescence.