Abstract:
The longitudinal magnetoresistance in bismuth films depending on the thickness and deformation in the film plane has been studied. On the magnetic field dependences of the longitudinal magnetoresistance, the presence of a maximum turning into negative magnetoresistance was found. It was shown that the difference in the crystallite sizes of the of the films makes a much smaller contribution to the displacement of the maximum on the magnetofield dependence than the effect of deformation in the plane of the film due to the difference in the bismuth coefficient of thermal expansion and the substrate material. The different nature of the maximum formation for films with a thickness greater than and less than 100 nm is shown.
Keywords:thin films, bismuth, longitudinal magnetoresistance, quantum limit on the magnetic field, chiral anomaly, weyl semimetal, weak localization.