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Fizika Tverdogo Tela, 2023 Volume 65, Issue 1, Pages 83–86 (Mi ftt10567)

Semiconductors

Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect

M. M. Degoeva, M. M. Afanas'eva, V. K. Kalevicha, K. V. Kavokinb, N. V. Kozyreva, G. Karczewskic, Yu. G. Kusrayeva

a Ioffe Institute, St. Petersburg, Russia
b Saint Petersburg State University, St. Petersburg, Russia
c Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Abstract: In tunnel-coupled quantum wells of different widths, it was found that the spin dynamics arising from resonant pulsed optical pumping of an exciton in the narrow well includes the dynamics of electron spin polarization in the wide well, although the electron level in the wide well is 55 meV lower than the electron level in the narrow well. An analysis of the obtained results showed that the observed effect is caused by the exchange interaction of spin-polarized electrons in the wide well with exciton states in the narrow well.

Keywords: semiconductor nanostructures, exchange interaction, Kerr effect.

Received: 20.09.2022
Revised: 20.09.2022
Accepted: 24.09.2022

DOI: 10.21883/FTT.2023.01.53927.478



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© Steklov Math. Inst. of RAS, 2025