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Fizika Tverdogo Tela, 2023 Volume 65, Issue 4, Pages 577–586 (Mi ftt10639)

Ferroelectricity

Electrical conductivity and interface phenomena in thin-film heterostructures based on lithium niobate and lithium tantalate

S. I. Gudkova, A. V. Solnyshkina, R. N. Zhukovb, D. A. Kiselevb, E. M. Semenovaa, A. N. Belovc

a Tver State University, Tver, Russia
b National University of Science and Technology «MISIS», Moscow
c National Research University of Electronic Technology, Zelenograd, Russia

Abstract: In this work, the electrophysical properties of metal-ferroelectric-semiconductor structures – Cu/LiNbO$_3$/Si and Ag/LiTaO$_3$/Si – with a ferroelectric layer thickness of 200 nm have been studied. The ferroelectric layers were deposited by RF magnetron sputtering. A topography study of thin film surface revealed a grain structure. The electrical conductivity mechanisms in Cu/LiNbO$_3$/Si and Ag/LiTaO$_3$/Si were considered. In a dependence of bias voltage value, there are a space charge-limited current, hopping conduction, and Schottky emission in Cu/LiNbO$_3$/Si structures. For Ag/LiTaO$_3$/Si structures, the space charge-limited current and hopping conduction were observed. An asymmetry of the current-voltage characteristics may indicate the presence of a potential barrier at the interface. For the studied structures, the value of the potential barrier was determined.

Keywords: metal-ferroelectric-semiconductor structures, thin films, lithium niobate, lithium tantalate, electrophysical properties, electrical conductivity, potential barrier.

Received: 18.01.2023
Revised: 18.01.2023
Accepted: 28.01.2023

DOI: 10.21883/FTT.2023.04.55294.7



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