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Fizika Tverdogo Tela, 2025 Volume 67, Issue 1, Pages 3–13 (Mi ftt10680)

XVI Russian Conference on Semiconductor Physics, October 7-11, 2024, St. Petersburg
Semiconductors

Megadevices of silicon microelectronics

V. K. Eremin, E. M. Verbitskaya, N. N. Fadeeva

Ioffe Institute, St. Petersburg, Russia

Abstract: The challenges of fundamental science have a direct impact on the boundaries of the field in which semiconductor devices and their technology definitely occupy a leading position. This stable trend was continued in recent decades, when the plans of fundamental high-energy physics have been consistently implemented along with the development of its instrumental base. This trend can be seen in the creation of new megadevices - such as particle detectors for experiments at the Large Hadron Collider, space gamma-telescopes and detectors of Dark Matter particles and particles, in which the scale of the silicon devices part goes beyond the usual understanding of a “semiconductor device”. In this review, these devices will be described in terms of semiconductor device physics, which allows estimating specific problems of their implementation and development prospects.

Keywords: silicon $p^+$$n$$n^+$ sensor, detector of events, Large Hadron Collider, gamma-astrophysics, neutrino.

Received: 10.10.2024
Revised: 17.11.2024
Accepted: 18.11.2024

DOI: 10.61011/FTT.2025.01.59761.1-25



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© Steklov Math. Inst. of RAS, 2025