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Fizika Tverdogo Tela, 2025 Volume 67, Issue 1, Pages 22–27 (Mi ftt10682)

XVI Russian Conference on Semiconductor Physics, October 7-11, 2024, St. Petersburg
Semiconductors

Thermal annealing of CdTe-rich HgCdTe: structural and optical studies

M. S. Ruzhevicha, K. J. Mynbaevb, N. L. Bazhenovb, M. V. Dorogova, A. M. Smirnova, V. V. Bel'kovb, M. V. Tomkovichb, V. S. Varavinc, V. G. Remesnikc, I. N. Uzhakovc, N. N. Mikhailovc

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The article presents the results of studying the structural and optical properties of Hg$_{1-x}$Cd$_x$Te films with a high ($x$ = 0.5–0.7) CdTe content, grown by molecular beam epitaxy and subjected to thermal annealing at temperatures from 330 to 440$^\circ$Ñ. The effect of annealing on the crystal structure and point defects is determined based on optical transmission, photoluminescence, X-ray diffraction, and energy-dispersive X-ray spectroscopy studies. It is shown that the defect structure of the material undergoes significant changes after annealing, while its crystalline perfection changes insignificantly.

Keywords: HgCdTe, annealing, photoluminescence, defects, structural properties.

Received: 10.10.2024
Revised: 17.11.2024
Accepted: 18.11.2024

DOI: 10.61011/FTT.2025.01.59763.4-25



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© Steklov Math. Inst. of RAS, 2025