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Fizika Tverdogo Tela, 2025 Volume 67, Issue 1, Pages 180–186 (Mi ftt10705)

XVI Russian Conference on Semiconductor Physics, October 7-11, 2024, St. Petersburg
Surface physics, thin films

Numerical model for studying 3$D$ island films by Auger electron spectroscopy. The Sm–Si(111) system

V. E. Remele, M. V. Kuzmin

Ioffe Institute, St. Petersburg, Russia

Abstract: A model for quantifying the peak intensity in Auger electron spectroscopy for thin-film structures formed by the Volmer–Weber, Stranski–Krastanov or similar mechanisms has been proposed. This model can be used to process experimental results and provides information on the density and shape of three-dimensional islands. It is tested for the reactive Sm–Si(111) system. It is found that in this system, a change in the structure of the wetting layer, i.e., the transition from the $\sqrt{3}$ to (5 $\times$ 1) reconstruction, is accompanied by an increase in the aspect ratio of samarium disilicide crystallites by more than seven times. A physical explanation for this transformation is proposed.

Keywords: thin films, Auger electron spectroscopy, growth mechanism, three-dimensional islands, wetting layer, samarium disilicide.

Received: 29.10.2024
Revised: 28.12.2024
Accepted: 05.01.2025

DOI: 10.61011/FTT.2025.01.59786.287



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© Steklov Math. Inst. of RAS, 2025