Abstract:
The technology of obtaining structured thin films of strontium iridates of the compositions SrIrO$_3$ and Sr$_2$IrO$_4$ by direct current cathode sputtering is presented. Both compositions were synthesized using the stoichiometric target Sr$_2$IrO$_4$, only the technological parameters varied. The composition of the resulting films was determined by the operating pressure and temperature. The electrophysical and structural properties of the obtained dielectric Sr$_2$IrO$_4$ and “metallic” SrIrO$_3$ films are discussed. The dielectric series is compared with Sr$_2$IrO$_4$ films obtained by laser ablation previously.
Keywords:strontium iridate, cathode sputtering, metals, disordered structures, hopping conductivity, activation energy of charge carriers.