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Fizika Tverdogo Tela, 2023 Volume 65, Issue 9, Pages 1519–1526 (Mi ftt10804)

Semiconductors

Charge transfer in solid solutions Bi$_{0.9}$Sb$_{0.1}$ doped with Mn

A. I. Nadzhafova, T. G. Mamedova, Kh. V. Aliguliyevaab, S. Sh. Gahramanova, V. B. Alievaa, V. N. Zverevc, N. A. Abdullaevad

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Sumqayit State University, Sumgait, Azerbaijan
c Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
d Baku State University, Baku, Azerbaijan

Abstract: Electrical and galvanomagnetic effects in single crystals of Bi$_{0.9}$Sb$_{0.1}$ solid solutions doped with 1 at.% Mn have been studied. It is shown that in single crystals of Bi$_{0.9}$Sb$_{0.1}$ solid solutions doped with 1 at.% Mn at temperatures below 180 K, activation conductiity with an activation energy of 10 meV is observed. After thermal annealing, in addition to activation conductivity, at temperatures below 20 K a “metallic” character of conductivity is observed, which is due to conduction over the impurity band. It was found that in single crystals of Bi$_{0.9}$Sb$_{0.1}$ solid solutions doped with 3 at.% Mn, a “metallic” character of conductivity is observed with a feature at low temperatures of about 25 K, which reacts to applied external magnetic fields. After thermal annealing, the “metallic” nature of the conductivity is retained, but this feature practically disappears. The mobility and concentration of charge carriers are estimated.

Keywords: solid solutions, impurity band, conductivity, magnetoresistance, activation energy.

Received: 25.07.2023
Revised: 25.07.2023
Accepted: 26.07.2023

DOI: 10.21883/FTT.2023.09.56247.164



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© Steklov Math. Inst. of RAS, 2025