Impurity composition and cathodoluminescence of HPHT-diamond type IIb with boron concentration up to 15 ppm

A single-crystal multisector plate of HPHT-type IIb diamond by local cathodoluminescence (SL) at 77 K and IR spectroscopy has been studied. The SL features of growth sectors (100), (110), (113), (111) of HPHT-grown diamond were investigated. In the luminescence of the band with a maximum of 2.3 eV, two growth sector species- dependent components with lifetimes in the ranges of 6–13 and 75–115 $\mu$s are identified, respectively. The lifetime of the band with a maximum of 3.0 eV is less than 100 ns. An assumption is made that each growth facet represents a separate luminescent material with its characteristic cathodoluminescent properties. A diagram of boron impurity capture by different growth facets under low-nitrogen growth conditions is constructed.