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Fizika Tverdogo Tela, 2023 Volume 65, Issue 12, Pages 2230–2238 (Mi ftt10922)

Semiconductors

Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing

Yu. A. Danilova, Yu. A. Agafonovb, V. I. Bachurinc, V. A. Bykova, O. V. Vikhrovaa, V. I. Zinenkob, I. L. Kalentyevaa, A. V. Kudrina, A. V. Nezhdanova, A. E. Parafind, S. G. Simakinc, P. A. Yunind, A. A. Yakovlevaa

a Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
b Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Russia
c Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences, Yaroslavl, Russia
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Abstract: Using the methods of secondary ion mass spectrometry, X-ray diffraction, Raman scattering, measurements of the Hall effect and magnetoresistance, and magnetic circular dichroism, an experimental study of the properties of layers obtained by implanting manganese ions (energy of 180 keV) into semi-insulating gallium arsenide was carried out, followed by annealing with a KrF excimer laser pulse. It has been shown that at ion doses from 1 $\cdot$ 10$^{16}$ to 5 $\cdot$ 10$^{16}$ cm$^{-2}$ and a laser energy density of 300 mJ/cm$^2$, heavily doped layers of $p$-type conductivity are formed, which, according to the results of studies by different methods, have ferromagnetic properties with a Curie temperature that depends on the dose ions and reaching 120 K. The influence of ion sputtering on impurity profiles is considered and taken into account in this work. It was found that during subsequent laser annealing, segregation of Mn atoms to the GaAs surface is observed.

Keywords: gallium arsenide, implantation of Mn ions, laser annealing, anomalous Hall effect, ferromagnetism, Curie temperature.

Received: 17.10.2023
Revised: 17.10.2023
Accepted: 24.10.2023

DOI: 10.61011/FTT.2023.12.56767.230



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