Abstract:
We investigated spin waves (SW) propagation in a ferromagnetic/semiconductor array of parallel semiconductor strips of gallium arsenide (GaAs) placed on the surface of a ferromagnetic film of iron-yttrium garnet (YIG). Used by numerical simulation investigated SWs properties propagating in the tangentially magnetized YIG/GaAs structure. The effect of controlled nonreciprocity of the spin-wave signal, manifested in the change of the longitudinal wave number at variation of the concentration of electron density in GaAs strips, has been demonstrated. The influence of the concentration of electron density in an array of GaAs strips on the properties of SWs propagating in a ferrite film has been studied in the case when the Bragg resonance condition is satisfied for transverse wave numbers. The proposed structure can be applied to signal processing devices based on magnonics principles.