V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, S. G. Pavlov, H.-W. Hübers, “Recombination in gapless HgTe/CdHgTe quantum well heterostructure”, Fizika Tverdogo Tela, 2022, Volume 64, Issue 2,Pages <nobr>173

Semiconductors

Recombination in gapless HgTe/CdHgTe quantum well heterostructure

V. Ya. Aleshkin^a, A. A. Dubinov^a, V. I. Gavrilenko^a, S. G. Pavlov^b, H.-W. Hübers^bc

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany
^c Humboldt-Universität zu Berlin, Institut für Physik, Berlin, Germany

Abstract: Three recombination mechanisms of nonequilibrium carriers in gapless undoped quantum well in HgTe/CdHgTe heterostructure are considered. Dependencies of ensemble-average probability of recombination (inverse of recombination time) on concentration of nonequilibrium carriers for recombination with emission of optical phonons, recombination with emission of two-dimensional plasmons, and radiative recombination have been calculated.

Keywords: gapless HgTe quantum well, recombination mechanisms of nonequilibrium carriers.

Received: 26.10.2021
Revised: 26.10.2021
Accepted: 28.10.2021

DOI: 10.21883/FTT.2022.02.51947.227