D. A. Kiselev, S. S. Starukhina, T. S. Ilina, N. F. Kuharskaya, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “Effect of dopant on piezoelectric and dielectric properties of thin films Bi$_{3.25}$La$_{0.75}$Ti$_{3-x}$A$_x$O$_{12}$ ($A$ – Мn, Zr, Nb)”, Fizika Tverdogo Tela, 2022, Volume 64, Issue 10,Pages 1483

Ferroelectricity

Effect of dopant on piezoelectric and dielectric properties of thin films Bi$_{3.25}$La$_{0.75}$Ti$_{3-x}$A$_x$O$_{12}$ ($A$ – Мn, Zr, Nb)

D. A. Kiselev^ab, S. S. Starukhina^b, T. S. Ilina^b, N. F. Kuharskaya^a, V. G. Naryshkina^a, A. A. Sivov^a, G. V. Chucheva^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b National University of Science and Technology «MISIS», Moscow, Russia

Abstract: It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending on the alloying impurity material, which leads to changes in coercive voltage, internal displacement field and control coefficient.

Keywords: lead-free ferroelectric films, bismuth titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.

Received: 12.05.2022
Revised: 12.05.2022
Accepted: 14.05.2022

DOI: 10.21883/FTT.2022.10.53094.376