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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2022 Volume 64, Issue 11, Pages 1690–1694 (Mi ftt11188)

This article is cited in 2 papers

Semiconductors

Percolation effect impact on resistive switching of structures based on nanocomposite (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$

K. È. Nikiruy, A. V. Emelyanov, A. N. Matsukatova, E. V. Kukueva, A. L. Vasil'ev, A. V. Sitnikov, V. A. Demin, V. V. Ryl'kov

National Research Centre "Kurchatov Institute", Moscow

Abstract: Comparative studies of resistive switching (RS) effect of metal/nanocomposite/metal (M/NC/M), metal/nanocomposite/LiNbO$_3$/metal (M/NC/LNO/M) structures based on NC (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$ ($x$ = 6–20 at.%) with CoFe nanogranules 2–4 nm in size, as well as structures without a NC layer (M/LNO/M), have been carried out. It was found that the percolation conductivity in NC and presence of a thin LNO layer play a key role in the RS effect. When the metal content approaches the percolation threshold of M/NC/M structures ($x_p\approx$ 10 at.%), low-resistance percolation nanochannels of granules are formed in structures with an embedded LNO layer, which ensure their stable RS, which, however, are noticeably suppressed as $x$ decreases relative to $x_p$ by $\Delta x\approx$ 1–2 at.%.

Keywords: resistive switching, memristor, nanocomposite, percolation.

Received: 20.06.2022
Revised: 20.06.2022
Accepted: 22.06.2022

DOI: 10.21883/FTT.2022.11.53321.410



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