Experimental study and computer simulation of high temperature dislocation images in X-ray section topograms in $\mathrm{Si}$

I. L. Smol'skii, G. A. Dilbaryan, F. N. Chukhovskii, A. I. Ryskin, V. N. Rozhanskii

Institute of Cristallography of the USSR Academy of Sciences, Moscow

UDC: 539.26/27

Received: 23.07.1986
Revised: 17.11.1986

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