S. V. Chuchupal, G. A. Komandin, E. S. Zhukova, O. E. Porodinkov, I. E. Spektor, A. I. Gribenyukov, “Effect of electron irradiation of ZnGeP<nobr>$_2$</nobr> single crystals on terahertz losses in a wide temperature range”, Fizika Tverdogo Tela, 2015, Volume 57, Issue 8,Pages <nobr>1467

Semiconductors

Effect of electron irradiation of ZnGeP$_2$ single crystals on terahertz losses in a wide temperature range

S. V. Chuchupal^a, G. A. Komandin^a, E. S. Zhukova^ab, O. E. Porodinkov^a, I. E. Spektor^a, A. I. Gribenyukov^c

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region
^c Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch of the Russian Academy of Science, Tomsk

Abstract: The reflection and transmission spectra of ZnGeP$_2$ single crystals irradiated with 4-MeV electrons have been measured in the frequency range of 5–5000 cm$^{-1}$ at temperatures in the range of 10–300 K. Based on the measured spectra, the spectra of complex permittivity $\varepsilon^*(\nu)$ and absorption coefficient $\alpha(\nu)$ have been simulated using the dispersion analysis method. It has been found that the electron irradiation decreasing the losses in the pumping range by a factor of 2–3 does not lead to additional losses in the region of generating terahertz radiation.

Received: 26.02.2015