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Fizika Tverdogo Tela, 2015 Volume 57, Issue 8, Pages 1473–1478 (Mi ftt11581)

Semiconductors

Influence of the concentration of intercalated atoms and temperature on relaxation processes upon charge transfer in Cu$_x$HfSe$_2$ compounds

V. G. Pleshcheva, N. V. Melnikovaa, N. V. Baranovab

a Institute of Natural Sciences, Ural Federal University named after the first President of Russia Boris Yeltsin, Ekaterinburg
b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The temperature dependences of impedance spectra of the intercalation compounds Cu$_x$HfSe$_2$ ($x$ = 0.1, 0.2) in the frequency range from 0.1 Hz to 5 MHz have been obtained for the first time. It has been shown that the characteristic times of relaxation processes decrease with an increase in the concentration of copper in the samples, as well as with an increase in the temperature. This is accompanied by a shift of the frequency dispersion of the complex conductivity toward the higher frequency range. The frequency and temperature dependences of the dielectric loss tangent for the studied samples are characteristic of losses due to the through electrical conductivity.

Received: 26.02.2015


 English version:
Physics of the Solid State, 2015, 57:8, 1494–1499

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© Steklov Math. Inst. of RAS, 2025