I. Kh. Akopyan, V. Yu. Davydov, M. È. Labzovskaya, A. A. Lisachenko, Ya. A. Mogunov, D. V. Nazarov, B. V. Novikov, A. I. Romanychev, A. Yu. Serov, A. N. Smirnov, V. V. Titov, N. G. Filosofov, “Photoluminescence spectra of thin ZnO films grown by ALD technology”, Fizika Tverdogo Tela, 2015, Volume 57, Issue 9,Pages <nobr>1817

Low dimensional systems

Photoluminescence spectra of thin ZnO films grown by ALD technology

I. Kh. Akopyan^a, V. Yu. Davydov^b, M. È. Labzovskaya^a, A. A. Lisachenko^a, Ya. A. Mogunov^a, D. V. Nazarov^c, B. V. Novikov^a, A. I. Romanychev^c, A. Yu. Serov^a, A. N. Smirnov^b, V. V. Titov^a, N. G. Filosofov^a

^a Saint Petersburg State University
^b Ioffe Institute, St. Petersburg
^c Institute of Chemistry, St. Petersburg State University

Abstract: The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.

Received: 16.04.2015