Low-frequency impedance in thin films near the metal-semiconductor phase transition

The impedance of thin VO$_2$ films at temperatures near the metal-semiconductor phase transition has been studied. It has been found that, in the low-temperature region, there is an abrupt change in the impedance. It has been demonstrated that the nature of this phenomenon is connected with thermoinertial processes in the film. From the experimental data, the heat conductivity of the film/substrate transition layer has been evaluated.