V. N. Bessolov, A. S. Grashchenko, E. V. Konenkova, A. V. Myasoedov, A. V. Osipov, A. V. Redkov, S. N. Rodin, V. P. Rubets, S. A. Kukushkin, “Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN”, Fizika Tverdogo Tela, 2015, Volume 57, Issue 10,Pages 1916

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Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

V. N. Bessolov^ab, A. S. Grashchenko^a, E. V. Konenkova^ab, A. V. Myasoedov^b, A. V. Osipov^ac, A. V. Redkov^a, S. N. Rodin^b, V. P. Rubets^d, S. A. Kukushkin^ac

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d State Technological Institute of St. Petersburg (Technical University)

Abstract: A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on $n$- and $p$-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on $p$-Si and $n$-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride–hydride epitaxy on silicon substrates has been proposed.