Yu. V. Kislinskii, G. A. Ovsyannikov, A. M. Petrzhik, K. I. Constantinian, N. V. Andreev, T. A. Sviridova, “Structure and electron transport of strontium iridate epitaxial films”, Fizika Tverdogo Tela, 2015, Volume 57, Issue 12,Pages <nobr>2446

This article is cited in 10 papers

Surface physics, thin films

Structure and electron transport of strontium iridate epitaxial films

Yu. V. Kislinskii^ab, G. A. Ovsyannikov^ac, A. M. Petrzhik^a, K. I. Constantinian^a, N. V. Andreev^d, T. A. Sviridova^d

^a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
^b Institute of Cristallography Russian Academy of Sciences, Moscow
^c Chalmers University of Technology, Gothenburg, Sweden
^d National University of Science and Technology «MISIS», Moscow

Abstract: The crystallographic and electrophysical properties of epitaxial SrTiO$_3$ films, in which the crystal lattice is deformed due to the mismatch between the lattice parameters of strontium iridate and the substrate, have been studied. Substrates (001) SrTiO$_3$, (001) LaAlO$_3$ + Sr$_2$AlTaO$_6$ (LSAT), (110) NdGaO$_3$, and (001) LaAlO$_3$ have been used. As a result of the deformation of the crystal lattice, the electrical resistivities of the films deposited on substrates with different lattice parameters differ by several times. The SrTiO$_3$ films with thickness $d$ = 90 nm, grown on SrTiO$_3$ and LSAT substrates, have a nonmonotonic temperature dependence of the conductivity: type of the temperature dependence of the conductivity changes from metallic to dielectric at $T_L$ = 200–250 K. The electrical resistance of the films with thicknesses less than 20 nm on all the substrates decreases exponentially with increasing temperature.

Received: 12.05.2015