Control of magnetic characteristics of spin LEDs with a magnetic system “Mn delta layer – InGaAs/GaAs quantum well” due to delta doping with an acceptor impurity

Magnetic and luminescent properties of spin light-emitting diodes based on heterostructures with an InGaAs/GaAs quantum well and Mn and C delta-layers are studied. The dependences of the circular polarization degree of electroluminescence on the location of the C delta-layer relative to the quantum well and the Mn delta-layer are obtained. It is found that when the carbon delta-layer is localized in the quantum well region, the maximum value of the circular polarization degree is observed, while when the carbon delta-layer is localized between the quantum well and the Mn delta-layer, the degree of polarization is minimal. The obtained data are explained in terms of known models of the interaction of charge carriers in a quantum well with a closely located Mn delta-layer.