Migration of si atoms on W(100) in surface tungsten silicide formation

Surface diffusion of silicon atoms on the W(100) surface was studied using Auger electron spectroscopy and thermal desorption methods in a wide range of coverages and temperatures. It was shown that the activation energy of migration changes from $E_{\mathrm{m}}\ge$ 1.8 eV at low Si coverages to $E_{\mathrm{m}}\approx$ 0.5 eV under WSi surface silicide formation