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Fizika Tverdogo Tela, 2014 Volume 56, Issue 1, Pages 156–159 (Mi ftt11871)

This article is cited in 4 papers

XXII International Conference on the Use of Neutron Scattering in Condensed Matter Research (RNICS-2012), St. Petersburg, Zelenogorsk (October 15-19, 2012)
Functional materials

Application of reactor neutrons to the investigation of the radiation resistance of semiconductor materials of Group III–V and sensors

I. A. Bolshakovaa, S. A. Kulikovb, R. F. Konoplevac, V. A. Chekanovc, I. S. Vasil'evskiid, F. M. Shurygina, E. Yu. Makidoa, I. Durane, A. P. Moroza, A. P. Shtabalyuka

a Lviv Polytechnic National University
b Joint Institute for Nuclear Research, Dubna, Moscow region
c The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
d National Engineering Physics Institute "MEPhI", Moscow
e Institute of Plasma Physics AS CR, Association EURATOM/IPP.CR, Prague, Czech Republic

Abstract: The investigation of the radiation resistance of Group III–V semiconductor materials is an important and urgent problem. Magnetic sensors based on radiation resistant semiconductor materials are widely used in magnetomeasuring systems of thermonuclear industrial and experimental reactors. The basic approaches to the study of semiconductor materials under conditions of neutron irradiation and the results of some experiments on testing indium-containing semiconductor materials InSb, InAs, and their alloys InAs$_x$Sb$_{1-x}$ are presented. The presented experience of the development of equipment for on-line testing of materials and magnetic diagnostic sensors under radiation conditions can be used for testing a wide range of materials under conditions close to those of the ITER and other thermonuclear reactors.


 English version:
Physics of the Solid State, 2014, 56:1, 157–160

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