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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2014 Volume 56, Issue 4, Pages 647–651 (Mi ftt11950)

This article is cited in 1 paper

Semiconductors

Influence of lanthanide impurities on the anion conductivity of cubic zirconia

B. I. Perekrestov, V. V. Tokii, N. V. Tokii, G. K. Volkova

Galkin Donetsk Institute for Physics and Engineering, Donetsk

Abstract: The ion conductivity of ceramics based on cubic zirconia with lanthanide impurities has been investigated using impedance spectroscopy. Ambiguous behavior of activation energy of anion migration in this material has been found. At a high experimental temperature (770$^\circ$C), the activation barrier for anion migration decreases as the ionic radius of the cation impurity increases, while at a low temperature (380$^\circ$C), an increase in this quantity is observed. A simple elastic model of the migration barrier of the anion in the crystallite, which confirms the experimental results at a high temperature, has been considered.

Received: 17.09.2013


 English version:
Physics of the Solid State, 2014, 56:4, 673–677

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