RUS  ENG
Full version
JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2014 Volume 56, Issue 5, Pages 883–887 (Mi ftt11987)

This article is cited in 2 papers

Semiconductors

Temporal dynamics of impurity photoconductivity in $n$-GaAs and $n$-InP

V. Ya. Aleshkinab, D. I. Burdeinya

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod

Abstract: The dynamics of impurity photoconductivity in $n$-GaAs and $n$-InP under photoexcitation with a short light pulse has been calculated. It has been shown that the photoconductivity dynamics in a nanosecond time range is determined by cooling of electrons, while the role of cascade capture of electrons by impurity is insignificant in this range. A nonmonotonic time dependence of photoconductivity caused by the competition between different relaxation mechanisms of the electron pulse has been predicted.

Received: 29.10.2013


 English version:
Physics of the Solid State, 2014, 56:5, 917–921

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025