Nanoindentation of amorphous Ge–As–Se films

Changes in the nanohardness $H$ and Young's modulus $E$ of Ge$_x$As$_y$Se$_{100-x-y}$ films have been studied as a function of the penetration depth of the Berkovich indenter. The values of $H$ and $E$ have been measured in the regime of harmonic modulation of a linearly increasing indenter load. It has been shown that the changes in $E$ and $H$ of the films under study during nanoindentation arise due to the peculiarities of their elastoplastic behavior, the formation of deformation zones near the nanocontact, and also size effects.