A. P. Odrinsky, T. G. Mamedov, M.-H Yu. Seyidov, V. B. Alieva, “Photoelectric activity of structural defects of a single crystal of the ferroelectric-semiconductor TlInS<nobr>$_2$</nobr> : La”, Fizika Tverdogo Tela, 2014, Volume 56, Issue 8,Pages <nobr>1554

This article is cited in 12 papers

Impurity centers

Photoelectric activity of structural defects of a single crystal of the ferroelectric-semiconductor TlInS$_2$ : La

A. P. Odrinsky^a, T. G. Mamedov^b, M.-H Yu. Seyidov^bc, V. B. Alieva^b

^a Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk
^b Institute of Physics Azerbaijan Academy of Sciences
^c Department of Physics, Gebze Institute of Technology, Gebze, Kocaeli, Turkey

Abstract: Photoinduced current transient spectroscopy has been used in studying deep-level defects of the ferroelectric-semiconductor TlInS$_2$. The specific features of defect detection in the lanthanum-doped and undoped single crystals have been compared. The explanation of the decrease in the photoelectric activity of defects in the doped sample has been proposed.

Received: 23.01.2014