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Fizika Tverdogo Tela, 2014 Volume 56, Issue 10, Pages 1886–1890 (Mi ftt12149)

This article is cited in 33 papers

Semiconductors

Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method

V. V. Brusa, M. N. Solovana, E. V. Maistruka, I. P. Kozyarskiia, P. D. Mar'yanchuka, K. S. Ulyanytskya, J. Rappichb

a Chernivtsi National University named after Yuriy Fedkovych
b Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

Abstract: The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined ($E_g$ = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: $E_a$ = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: $\tau_{\mathrm{gb}} = R_{\mathrm{gb}}C_{\mathrm{gb}} = 1/\omega_{\mathrm{gb}}$ = 1.62 $\times$ 10$^{-3}$ s and $\tau_{\mathrm{g}} = R_{\mathrm{g}}C_{\mathrm{g}} = 1/\omega_{\mathrm{g}}$ = 9.1 $\times$ 10$^{-7}$ s for grain boundaries and grains, respectively.

Received: 16.01.2014
Accepted: 16.04.2014


 English version:
Physics of the Solid State, 2014, 56:10, 1947–1951

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