G. A. Glushenko, T. A. Leonova, A. L. Kolonenko, A. I. Dudnik, I. V. Osipova, N. G. Vnukova, I. V. Nemtsev, S. M. Zharkov, G. N. Churilov, “Synthesis of 6<i>H</i>-SiC single-crystal nanowires in a flow of carbon-silicon high-frequency arc plasma”, Fizika Tverdogo Tela, 2014, Volume 56, Issue 10,Pages <nobr>2039

Low dimensional systems

Synthesis of 6H-SiC single-crystal nanowires in a flow of carbon-silicon high-frequency arc plasma

G. A. Glushenko^a, T. A. Leonova^b, A. L. Kolonenko^ab, A. I. Dudnik^ab, I. V. Osipova^a, N. G. Vnukova^a, I. V. Nemtsev^c, S. M. Zharkov^ab, G. N. Churilov^ab

^a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b Siberian Federal University, Krasnoyarsk
^c Krasnoyarsk Scientific Center of SB RAS

Abstract: Silicon carbide 6H-SiC nanoparticles and nanowires were obtained in carbon-silicon high-frequency arc plasma plasma in a helium atmosphere at a pressure of 0.1–0.6 MPa. It was shown that 6H-SiC nanowires grow from the arc plasma, as well as from the vapor, according to the known mechanism of vapor-solid condensation on a cold surface covered with single-crystal silicon carbide nuclei. The content of silicon carbide nanowires in the condensate reached 60 wt%. The obtained single-crystal silicon 6H-SiC nanowires had the diameter of 15–18 nm and length of 200–600 nm.

Received: 10.04.2014