M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, N. V. Malekhonova, E. I. Malysheva, “Epitaxial growth of MnGa/GaAs layers for diodes with spin injection”, Fizika Tverdogo Tela, 2014, Volume 56, Issue 10,Pages <nobr>2062

This article is cited in 3 papers

Surface physics, thin films

Epitaxial growth of MnGa/GaAs layers for diodes with spin injection

M. V. Dorokhin^a, D. A. Pavlov^b, A. I. Bobrov^b, Yu. A. Danilov^a, P. B. Demina^a, B. N. Zvonkov^a, A. V. Zdoroveyshchev^a, A. V. Kudrin^b, N. V. Malekhonova^b, E. I. Malysheva^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The possibility of the epitaxial growth of ferromagnetic manganese gallide (Mn$_3$Ga$_5$) layers on a the GaAs(100) surface was demonstrated. The ferromagnetic properties of epitaxial Mn$_3$Ga$_5$ at room temperature were evaluated from measurements of the anomalous Hall effect. A diode structure based on the Mn$_3$Ga$_5$/GaAs contact was formed, and the low-temperature electroluminescence of this diode was measured. The possibility of electroluminescence and the high crystal quality of the structures under study showed promises of their application in light-emitting diodes with spin injection.

Received: 21.04.2014