RUS  ENG
Full version
JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2013 Volume 55, Issue 2, Pages 234–242 (Mi ftt12307)

This article is cited in 10 papers

Semiconductors

EPR diagnostics of laser materials based on ZnSe crystals doped with transition elements

D. D. Kramushchenkoa, I. V. Il'ina, V. A. Soltamova, P. G. Baranova, V. P. Kalinushkinb, M. I. Studenikinb, V. P. Danilovb, N. N. Il'ichevb, P. V. Shapkinc

a Ioffe Institute, St. Petersburg
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The electron paramagnetic resonance (EPR) spectra observed in laser materials based on zinc selenide (ZnSe) crystals doped with transition elements have been analyzed and identified. It has been shown that, in addition to working impurities (Cr$^{2+}$, Co$^{2+}$, Fe$^{2+}$), the diffusion layer exhibits EPR spectra of accompanying impurities due to the diffusion of transition elements (chromium, cobalt, or iron) used in the preparation of active materials for quantum electronics (lasers, switches) operating in the mid-infrared range. EPR diagnostics of these impurities can be used in the development of appropriate regimes for minimizing concentrations of accompanying impurities that adversely affect the performance characteristics of laser materials. It has been found that, during the diffusion of transition metals, ions of the accompanying impurity Mn$^{2+}$, which is characterized by extremely informative EPR spectra, are embedded in the crystal lattice. It has been proposed to use these ions as ideal markers to control, on the electronic level, the crystal structure of the active diffusion layer.

Received: 13.06.2012


 English version:
Physics of the Solid State, 2013, 55:2, 269–277

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025