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Fizika Tverdogo Tela, 2013 Volume 55, Issue 3, Pages 591–601 (Mi ftt12367)

This article is cited in 2 papers

Surface physics, thin films

Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures

G. A. Valkovskiy, M. V. Baidakova, P. N. Brunkov, S. G. Konnikov, A. A. Sitnikova, M. A. Yagovkina, Yu. M. Zadiranov

Ioffe Institute, St. Petersburg

Abstract: The potential inherent in integrated characterization of multilayer periodic systems employed in development of extreme-ultraviolet mirrors was demonstrated using the example of Mo/Si structures grown by magnetron sputtering in different technological regimes. An integrated study provided mutually consistent data on the thicknesses and crystal structure of the layers, as well as on the quality of the interfaces. Measurements by atomic force microscopy permitted a comparison of surface roughness of the substrates and the multilayer systems grown on them. An analysis of the power spectral density functions revealed that low-frequency roughness is replicated from the substrate, whereas the high-frequency one can become smoothed out in the course of growth. X-ray diffractometry performed in the thin film mode showed that the Mo layers in the samples studied have different crystal structures, from the amorphous and polycrystalline to the [110]-textured one. An analysis of the transmission electron microscopy data confirmed that there is a difference in the degrees of crystallinity of Mo layers. The thicknesses of individual layers, the period, and the irreproducibility of the thicknesses and the period were determined using X-ray reflectometry. The root-mean-square roughness amplitude of the interfaces was estimated, and the existence of transition layers originating primarily from the Si layer was demonstrated. The study was used to formulate a proper strategy for the analysis of multilayer periodic systems with nanosized layers.

Received: 30.07.2012


 English version:
Physics of the Solid State, 2013, 55:3, 648–658

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