Abstract:
The potential profiles, work functions, and Schottky barriers of aluminum films with the ideal vacuum/Al(111)/SiO$_3$ and vacuum/Al$_2$O$_3$ interfaces and the SiO$_2$/Al(111)/Al$_2$O$_3$ sandwich have been calculated self-consistently with the use of the Kohn-Sham method and the model proposed in our previous work taking into account image forces and the conduction band of the insulator.